Monte Carlo simulation of spin polarized transport in nanowires and 2-D channels of III-V semiconductors

Swetali Nimje; Ashutosh Sharma; Bahniman Ghosh

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arXiv · 1111.2809

Monte Carlo simulation of spin polarized transport in nanowires and 2-D channels of III-V semiconductors

Swetali Nimje·Ashutosh Sharma·Bahniman Ghosh

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Abstract

We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende materials at various conditions, such as, temperature, external field etc. Spin dephasing in III-V channels is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. Spin dephasing length in nanowire is found to be greater than that in 2-D channel.

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Swetali Nimje, Ashutosh Sharma, Bahniman Ghosh. 2011-11-11. Monte Carlo simulation of spin polarized transport in nanowires and 2-D channels of III-V semiconductors. https://arxiv.org/abs/1111.2809

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