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arXiv · 1111.4525

Electric field control of nonvolatile four-state magnetization at room temperature

Sae Hwan Chun·Yi Sheng Chai·Byung-Gu Jeon·Hyung Joon Kim·Yoon Seok Oh·Ingyu Kim·Hanbit Kim·Byeong Jo Jeon·So Young Haam·Ju-Young Park·Suk Ho Lee·Jae-Ho Chung·Jae-Hoon Park·Kee Hoon Kim
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Abstract

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a multiferroic hexaferrite Ba$_{0.52}$Sr$_{2.48}$Co$_{2}$Fe$_{24}$O$_{41}$ single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62 $\mu$$_{B}$/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

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Sae Hwan Chun, Yi Sheng Chai, Byung-Gu Jeon, Hyung Joon Kim, Yoon Seok Oh, Ingyu Kim, Hanbit Kim, Byeong Jo Jeon, So Young Haam, Ju-Young Park, Suk Ho Lee, Jae-Ho Chung, Jae-Hoon Park, Kee Hoon Kim. 2011-11-19. Electric field control of nonvolatile four-state magnetization at room temperature. https://doi.org/10.1103/physrevlett.108.177201

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