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arXiv · 1111.4806

Room temperature ballistic transport in InSb quantum well nanodevices

A. M. Gilbertson·A. Kormanyos·P. D. Buckle·M. Fearn·T. Ashley·C. J. Lambert·S. A. Solin·L. F. Cohen
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Abstract

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

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A. M. Gilbertson, A. Kormanyos, P. D. Buckle, M. Fearn, T. Ashley, C. J. Lambert, S. A. Solin, L. F. Cohen. 2011-11-21. Room temperature ballistic transport in InSb quantum well nanodevices. https://doi.org/10.1063/1.3668107

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