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arXiv · 1111.5186

Defect evolution and interplay in n-type InN

Christian Rauch·Filip Tuomisto·Arantxa Vilalta-Clemente·Bertrand Lacroix·Pierre Ruterana·Simon Kraeusel·Ben Hourahine·William J. Schaff
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Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, V_In-V_N complexes are the dominant III-sublattice related vacancy defects. Enhanced formation of larger V_In-mV_N clusters is observed at the interface, which speaks for high concentrations of additional V_N in the near-interface region and coincides with an increase in the density of screw and edge type dislocations in that area.

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Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente, Bertrand Lacroix, Pierre Ruterana, Simon Kraeusel, Ben Hourahine, William J. Schaff. 2011-11-22. Defect evolution and interplay in n-type InN. https://doi.org/10.1063/1.3688038

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