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arXiv · 1111.6837

Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells

M. V. Durnev·M. M. Glazov·E. L. Ivchenko
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Abstract

We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, $lh1$, to the first excited heavy-hole subband, $hh2$, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of $lh1$ and $hh2$ states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.

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M. V. Durnev, M. M. Glazov, E. L. Ivchenko. 2011-11-29. Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells. https://doi.org/10.1016/j.physe.2011.12.003

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