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arXiv · 1112.1623

Modified Mott-Schottky Analysis of Nanocrystal Solar Cells

Shawn M. Willis·Cheng Cheng·Hazel E. Assender·Andrew A. R. Watt
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Abstract

Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes create a constant capacitance that distorts the junction's depletion capacitance and result in erroneous Vbi and N values when determined through Mott-Schottky analysis. The injection barrier capacitance is taken into account by incorporating a constant capacitance in parallel with the depletion capacitance.

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Shawn M. Willis, Cheng Cheng, Hazel E. Assender, Andrew A. R. Watt. 2011-12-07. Modified Mott-Schottky Analysis of Nanocrystal Solar Cells. https://arxiv.org/abs/1112.1623

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