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arXiv · 1112.2043

Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers

B. Gunnar Malm·Mohammadreza Kolahdouz·Fredrik Forsberg·Frank Niklaus
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Abstract

The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors

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B. Gunnar Malm, Mohammadreza Kolahdouz, Fredrik Forsberg, Frank Niklaus. 2011-12-09. Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers. https://arxiv.org/abs/1112.2043

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