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arXiv · 1112.2777

High-frequency performance of graphene field effect transistors with saturating IV-characteristics

I. Meric·C. R. Dean·S. -J. Han·L. Wang·K. A. Jenkins·J. Hone·K. L. Shepard
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Abstract

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.

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I. Meric, C. R. Dean, S. -J. Han, L. Wang, K. A. Jenkins, J. Hone, K. L. Shepard. 2011-12-13. High-frequency performance of graphene field effect transistors with saturating IV-characteristics. https://arxiv.org/abs/1112.2777

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