Electron temperature in electrically isolated Si double quantum dots

A. Rossi; T. Ferrus; D. A. Williams

doi:10.1063/1.3697832

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arXiv · 1112.3190

Electron temperature in electrically isolated Si double quantum dots

A. Rossi·T. Ferrus·D. A. Williams

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Abstract

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.

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A. Rossi, T. Ferrus, D. A. Williams. 2011-12-14. Electron temperature in electrically isolated Si double quantum dots. https://doi.org/10.1063/1.3697832

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