Vertical Graphene Base Transistor

Wolfgang Mehr; J. Christoph Scheytt; Jarek Dabrowski; Gunther Lippert; Ya-Hong Xie; Max C. Lemme; Mikael Ostling; Grzegorz Lupina

doi:10.1109/led.2012.2189193

arXiv · 1112.4520

Vertical Graphene Base Transistor

Wolfgang Mehr·J. Christoph Scheytt·Jarek Dabrowski·Gunther Lippert·Ya-Hong Xie·Max C. Lemme·Mikael Ostling·Grzegorz Lupina

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Abstract

We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.

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Wolfgang Mehr, J. Christoph Scheytt, Jarek Dabrowski, Gunther Lippert, Ya-Hong Xie, Max C. Lemme, Mikael Ostling, Grzegorz Lupina. 2011-12-19. Vertical Graphene Base Transistor. https://doi.org/10.1109/led.2012.2189193

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