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arXiv · 1112.6112

Optical quantum memory for polarization qubits with V-type three-level atoms

D. Viscor·A. Ferraro·Yu. Loiko·R. Corbalán·J. Mompart·V. Ahufinger
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Abstract

We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening (CRIB) technique. We theoretically show the possibility to store and retrieve a weak light pulse interacting with the two optical transitions of the system. This scheme implements a quantum memory for a polarization qubit - a single photon in an arbitrary polarization state - without the need of two spatially separated two-level media, thus offering the advantage of experimental compactness overcoming the limitations due to mismatching and unequal efficiencies that can arise in spatially separated memories. The effects of a relative phase change between the atomic levels, as well as of phase noise due to, for example, the presence of spurious electric and magnetic fields are analyzed.

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D. Viscor, A. Ferraro, Yu. Loiko, R. Corbalán, J. Mompart, V. Ahufinger. 2011-12-28. Optical quantum memory for polarization qubits with V-type three-level atoms. https://doi.org/10.1088/0953-4075%2F44%2F19%2F195504

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