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arXiv · 1201.2748

Mott-Hubbard localization in model of electronic subsystem of doped fullerides

Yuriy Dovhopyaty·Leonid Didukh·Oleksandr Kramar·Yuriy Skorenkyy·Yuriy Drohobitskyy
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Abstract

Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $AC_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.

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Yuriy Dovhopyaty, Leonid Didukh, Oleksandr Kramar, Yuriy Skorenkyy, Yuriy Drohobitskyy. 2012-01-13. Mott-Hubbard localization in model of electronic subsystem of doped fullerides. https://arxiv.org/abs/1201.2748

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