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arXiv · 1201.3988

Experimental study of the delayed threshold phenomenon in a semiconductor laser

Abdelkrim El Amili·Grégory Gredat·Mehdi Alouini·Isabelle Sagnes·Fabien Bretenaker
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Abstract

An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a hysteresis behavior in the vicinity of the threshold. The temporal width of this hysteresis is measured as a function of the modulation frequency, and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.

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Abdelkrim El Amili, Grégory Gredat, Mehdi Alouini, Isabelle Sagnes, Fabien Bretenaker. 2012-06-21. Experimental study of the delayed threshold phenomenon in a semiconductor laser. https://doi.org/10.1051/epjap%2F2012120070

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