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arXiv · 1201.4258

Resonant tunneling diode based on graphene/h-BN heterostructure

Nguyen Viet Hung·Fulvio Mazzamuto·Arnaud Bournel·Philippe Dollfus
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Abstract

In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN and C phases within a hexagonal lattice. The device operation and performance are investigated by means of a self- consistent model within the non-equilibrium Green's function formalism on a tight-binding Hamiltonian. This RTD exhibits a negative differential conductance effect which involves the resonant tunneling through both the electron and hole bound states of the graphene quantum well. It is shown that the peak- to-valley ratio can reach the value of 4 at room temperature for gapless graphene and the value of 13 for a bandgap of 50 meV.

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Nguyen Viet Hung, Fulvio Mazzamuto, Arnaud Bournel, Philippe Dollfus. 2012-01-20. Resonant tunneling diode based on graphene/h-BN heterostructure. https://doi.org/10.1088/0022-3727/45/32/325104

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