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arXiv · 1202.1560

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis·C. C. Lo·V. Lang·A. M. Tyryshkin·R. E. George·K. M. Yu·J. Bokor·S. A. Lyon·J. J. L. Morton·T. Schenkel
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Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

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C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, T. Schenkel. 2012-02-07. Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28. https://doi.org/10.1063/1.4704561

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