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arXiv · 1202.3545

Doping front instabilities in organic semiconductors: a means for optimizing optoelectronic devices

V. Bychkov·O. Yukhimenko·M. Modestov·M. Marklund
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Abstract

Recently, it was demonstrated that electrochemical doping fronts in organic semiconductors ex- hibit a new fundamental instability growing from multidimensional perturbations [Phys. Rev. Lett. 107, 016103 (2011)]. In the instability development, linear growth of tiny perturbations goes over into a nonlinear stage of strongly distorted doping fronts. Here we develop the nonlinear theory of the doping front instability and predict the key parameters of a distorted doping front, such as its velocity, in close agreement with the experimental data. We show that the instability makes the electrochemical doping process considerably faster. We obtain the self-similar properties of the front shape corresponding to the maximal propagation velocity, which allows for a wide range of controlling the doping process in the experiments. The theory developed provides the guide for optimizing the performance of organic optoelectronic devices.

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V. Bychkov, O. Yukhimenko, M. Modestov, M. Marklund. 2012-02-16. Doping front instabilities in organic semiconductors: a means for optimizing optoelectronic devices. https://arxiv.org/abs/1202.3545

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