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arXiv · 1202.3608

Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

Fabrizio Buscemi·Enrico Piccinini·Rossella Brunetti·Massimo Rudan·Carlo Jacoboni
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Abstract

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.

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Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti, Massimo Rudan, Carlo Jacoboni. 2012-02-16. Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields. https://arxiv.org/abs/1202.3608

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