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arXiv · 1202.4222

Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors

Satyaprasad P. Senanayak·S. Guha·K. S. Narayan
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Abstract

Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.

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Satyaprasad P. Senanayak, S. Guha, K. S. Narayan. 2012-02-20. Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors. https://doi.org/10.1103/physrevb.85.115311

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