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arXiv · 1202.6460

Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite

Jared J. I. Wong·Adrian G. Swartz·Renjing Zheng·Wei Han·Roland K. Kawakami
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Abstract

We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V.

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Jared J. I. Wong, Adrian G. Swartz, Renjing Zheng, Wei Han, Roland K. Kawakami. 2012-02-29. Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite. https://doi.org/10.1103/physrevb.86.060409

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