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arXiv · 1203.0233

Study of epitaxial graphene on non-polar 6H-SiC faces

B. K. Daas·K. Daniels·S. Shetu·T. S. Sudarshan·M. V. S. Chandrashekhar
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Abstract

We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack of a hexagonal template on the non-polar faces. Non-polar faces also exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with increasing temperature. This is attributed to decreasing stress with increasing temperature. These variations provide evidence of different EG growth mechanisms on non-polar and polar faces, likely due to differences in surface free energy. We also present differences between a-plane EG and m-plane EG in terms of morphology, thickness and Raman characteristics

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B. K. Daas, K. Daniels, S. Shetu, T. S. Sudarshan, M. V. S. Chandrashekhar. 2012-03-01. Study of epitaxial graphene on non-polar 6H-SiC faces. https://arxiv.org/abs/1203.0233

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