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arXiv · 1203.4406

Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures

Dieter Weber·Ulrich Poppe
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Abstract

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form ΔG/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.

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Dieter Weber, Ulrich Poppe. 2012-03-20. Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures. https://doi.org/10.1063/1.3691599

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