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arXiv · 1204.0578

Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces

J. K. Dash·T. Bagarti·A. Rath·R. R. Juluri·P. V. Satyam
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Abstract

The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate orientations and size of the island structures. This phenomena has been explained by incorporating a deviation parameter ($ε$) to the surface barrier term ($E_D$) in the kinematic Monte Carlo (kMC) simulations as one of the plausible mechanisms.

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J. K. Dash, T. Bagarti, A. Rath, R. R. Juluri, P. V. Satyam. 2012-04-03. Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces. https://doi.org/10.1209/0295-5075%2F99%2F66004

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