Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission and oxygen adsorbing

Yao Yao; Yintao You; Wei Si; Chang-Qin Wu

doi:10.1063/1.4731879

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arXiv · 1204.2022

Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission and oxygen adsorbing

Yao Yao·Yintao You·Wei Si·Chang-Qin Wu

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Abstract

We present a combined experimental and theoretical study to get insight into both memory and negative differential resistance (NDR) effect in organic memory devices. The theoretical model we propose is simply a one-dimensional metallic island array embedding within two electrodes. We use scattering operator method to evaluate the tunneling current among the electrode and islands to establish the basic bistable I-V curves for several devices. The theoretical results match the experiments very well, and both memory and NDR effect could be understood comprehensively. The experimental correspondence, say, the experiment of changing the pressure of oxygen, is addressed as well.

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Yao Yao, Yintao You, Wei Si, Chang-Qin Wu. 2012-04-10. Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission and oxygen adsorbing. https://doi.org/10.1063/1.4731879

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