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arXiv · 1204.2030

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Harihar Behera·Gautam Mukhopadhyay
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Abstract

Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.

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Harihar Behera, Gautam Mukhopadhyay. 2012-04-10. Strain-tunable band gap in graphene/h-BN hetero-bilayer. https://doi.org/10.1016/j.jpcs.2012.02.010

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