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arXiv · 1204.6702

High Mobility in a Stable Transparent Perovskite Oxide

Hyung Joon Kim·Useong Kim·Hoon Min Kim·Tai Hoon Kim·Hyo Sik Mun·Byung-Gu Jeon·Kwang Taek Hong·Woong-Jhae Lee·Chanjong Ju·Kee Hoon Kim·Kookrin Char
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Abstract

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm^2(Vs)^-1 at a doping level of 4.4x10^20 cm^-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 Deg. C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

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Hyung Joon Kim, Useong Kim, Hoon Min Kim, Tai Hoon Kim, Hyo Sik Mun, Byung-Gu Jeon, Kwang Taek Hong, Woong-Jhae Lee, Chanjong Ju, Kee Hoon Kim, Kookrin Char. 2012-04-30. High Mobility in a Stable Transparent Perovskite Oxide. https://doi.org/10.1143/apex.5.061102

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