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arXiv · 1205.2148

Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study

Taro Kanao·Hiroyasu Matsuura·Masao Ogata
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Abstract

An effective model that describes the Kondo effect due to a point defect in graphene is developed, taking account of the electronic state and the lattice structure of the defect. It is shown that this model can be transformed into a single-channel pseudogap Anderson model with a finite chemical potential. On the basis of the numerical renormalization group method, it is clarified that the experimentally observed gate-voltage dependence of the Kondo temperature is understood in this framework.

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Taro Kanao, Hiroyasu Matsuura, Masao Ogata. 2012-05-28. Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study. https://doi.org/10.1143/jpsj.81.063709

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