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arXiv · 1205.4488

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

C. Ojeda-Aristizabal·M. S. Fuhrer·N. P Butch·J. Paglione·I. Appelbaum
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Abstract

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si.

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C. Ojeda-Aristizabal, M. S. Fuhrer, N. P Butch, J. Paglione, I. Appelbaum. 2012-05-21. Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3. https://doi.org/10.1063/1.4733388

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