Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

Ion Garate; Leonid Glazman

doi:10.1103/physrevb.86.035422

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arXiv · 1206.1239

Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

Ion Garate·Leonid Glazman

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Abstract

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

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Ion Garate, Leonid Glazman. 2012-06-06. Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling. https://doi.org/10.1103/physrevb.86.035422

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