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arXiv · 1206.1710

Epitaxial graphene morphologies probed by weak (anti)-localization

Ather Mahmood·Cécile Naud·Clément Bouvier·Fanny Hiebel·Pierre Mallet·Jean-Yves Veuillen·Laurent Levy·Didier Chaussende·Thierry Ouisse
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Abstract

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].

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Ather Mahmood, Cécile Naud, Clément Bouvier, Fanny Hiebel, Pierre Mallet, Jean-Yves Veuillen, Laurent Levy, Didier Chaussende, Thierry Ouisse. 2012-06-08. Epitaxial graphene morphologies probed by weak (anti)-localization. https://doi.org/10.1063/1.4793591

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