Kondo effect near the Van Hove singularity in biased bilayer graphene

S. Lipinski; D. Krychowski

doi:10.3938/jkps.62.1440

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arXiv · 1206.4455

Kondo effect near the Van Hove singularity in biased bilayer graphene

S. Lipinski·D. Krychowski

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Abstract

Magnetic impurity adsorbed on one of the carbon planes of a bilayer graphene is studied. The formation of the many-body SU(2) and SU(4) resonances close to the bandgap is analyzed within the mean field Kotliar-Ruckenstein slave boson approach. Impact of enhanced hybridization and magnetic instability of bilayer doped near the Van Hove singularity on the screening of magnetic moment is discussed.

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S. Lipinski, D. Krychowski. 2012-06-20. Kondo effect near the Van Hove singularity in biased bilayer graphene. https://doi.org/10.3938/jkps.62.1440

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