Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Andrey V. Emelyanov; Andrey G. Kazanskii; Mark V. Khenkin; Pavel A. Forsh; Pavel K. Kashkarov; Mindaugas Gecevicius; Martynas Beresna; Peter G. Kazansky

doi:10.1063/1.4747207

arXiv · 1206.6025

Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Andrey V. Emelyanov·Andrey G. Kazanskii·Mark V. Khenkin·Pavel A. Forsh·Pavel K. Kashkarov·Mindaugas Gecevicius·Martynas Beresna·Peter G. Kazansky

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Abstract

Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.

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Andrey V. Emelyanov, Andrey G. Kazanskii, Mark V. Khenkin, Pavel A. Forsh, Pavel K. Kashkarov, Mindaugas Gecevicius, Martynas Beresna, Peter G. Kazansky. 2012-06-26. Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation. https://doi.org/10.1063/1.4747207

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