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arXiv · 1206.6125

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Marcio Fontana·Tristan Deppe·Anthony K. Boyd·Mohamed Rinzan·Amy Y. Liu·Makarand Paranjape·Paola Barbara
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Abstract

Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show work-function engineering to be an effective approach for controlling the polarity of MoS2 devices. Gated multi-layer MoS2 transistors with Au source/drain contacts exhibit n-type operation, while those with Pd contacts are shown to have p-type behavior. Devices with one Au and one Pd contact exhibit asymmetric ambipolar behavior and diode characteristics over a wide range of gate voltage, as well as a sizable photovoltaic effect. We argue that the photovoltaic effect arises from the built-in potential of the space charge accumulated at the source and drain contacts.

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Marcio Fontana, Tristan Deppe, Anthony K. Boyd, Mohamed Rinzan, Amy Y. Liu, Makarand Paranjape, Paola Barbara. 2013-04-09. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. https://doi.org/10.1038/srep01634

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