Spin transport in high quality suspended graphene devices

M. H. D. Guimarães; A. Veligura; P. J. Zomer; T. Maassen; I. J. Vera-Marun; N. Tombros; B. J. van Wees

doi:10.1021/nl301050a

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arXiv · 1207.1572

Spin transport in high quality suspended graphene devices

M. H. D. Guimarães·A. Veligura·P. J. Zomer·T. Maassen·I. J. Vera-Marun·N. Tombros·B. J. van Wees

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Abstract

We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

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M. H. D. Guimarães, A. Veligura, P. J. Zomer, T. Maassen, I. J. Vera-Marun, N. Tombros, B. J. van Wees. 2012-07-06. Spin transport in high quality suspended graphene devices. https://doi.org/10.1021/nl301050a

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