Comment on "Validity of Einstein Relation in Disordered Organic Semiconductors"

Ling Li; Shibing Long; Ming Liu

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arXiv · 1207.2205

Comment on "Validity of Einstein Relation in Disordered Organic Semiconductors"

Ling Li·Shibing Long·Ming Liu

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Abstract

Wetzelaer, Koster, and Blom [PRL 107, 066605] recently observed that the classic Einstein relation $\frac{D}μ=\frac{kT}{q}$ is still valid in disordered semiconductors in thermal(quasi)equilibrium by studying the diffusion-driven currents of single-carrier diodes. This is in contrast to the previous theoretical prediction [2] and experiment observation from Leo et.al. [3] where the Einstein relation increases with 1/T. We will discuss the reason for this discrepancy here and suggest that one-carrier diodes experiment might nor be suitable for verifying Einstein relation in organic semiconductors.

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Ling Li, Shibing Long, Ming Liu. 2013-10-10. Comment on "Validity of Einstein Relation in Disordered Organic Semiconductors". https://arxiv.org/abs/1207.2205

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