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arXiv · 1207.2996

Voltage-Gated Modulation of Domain Wall Velocity in an Ultrathin Metallic Ferromagnet

Uwe Bauer·Satoru Emori·Geoffrey S. D. Beach
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Abstract

The influence of gate voltage, temperature and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by an electric field applied to the Co/GdOx interface via a linear modulation of the activation energy barrier with gate voltage. At low speeds, the DW velocity can be changed significantly by a gate voltage, but the effect is diminished as the DW velocity increases, which limits electric field control of fast DW motion.

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Uwe Bauer, Satoru Emori, Geoffrey S. D. Beach. 2012-07-12. Voltage-Gated Modulation of Domain Wall Velocity in an Ultrathin Metallic Ferromagnet. https://doi.org/10.1063/1.4764071

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