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arXiv · 1207.3363

Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

L. M. Pham·N. Bar-Gill·D. Le Sage·A. Stacey·M. Markham·D. J. Twitchen·M. D. Lukin·R. L. Walsworth
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Abstract

We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical read-out contrast for NV multi-spin measurements, including enhanced AC magnetic field sensitivity, thus providing an important step towards high fidelity multi-spin-qubit quantum information processing, sensing and metrology.

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L. M. Pham, N. Bar-Gill, D. Le Sage, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, R. L. Walsworth. 2012-07-13. Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond. https://doi.org/10.1103/physrevb.86.121202

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