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arXiv · 1207.5978

L-valley Electron Spin Dynamics in GaAs

T. Zhang·P. Barate·C. T. Nguyen·A. Balocchi·T. Amand·P. Renucci·H. Carrere·B. Urbaszek·X. Marie
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Abstract

Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the $\Gamma$ valley following an energy relaxation of several hundreds of meV. Combining these high energy photo-excitation experiments with time-resolved photoluminescence spectroscopy of $\Gamma$ valley spin-polarized photogenerated electrons allows us to deduce a typical L valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.

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T. Zhang, P. Barate, C. T. Nguyen, A. Balocchi, T. Amand, P. Renucci, H. Carrere, B. Urbaszek, X. Marie. 2012-07-25. L-valley Electron Spin Dynamics in GaAs. https://doi.org/10.1103/physrevb.87.041201

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