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arXiv · 1208.3109

A Matterwave Transistor Oscillator

Seth C. Caliga·Cameron J. E. Straatsma·Alex A. Zozulya·Dana Z. Anderson
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Abstract

An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.

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Seth C. Caliga, Cameron J. E. Straatsma, Alex A. Zozulya, Dana Z. Anderson. 2012-08-15. A Matterwave Transistor Oscillator. https://arxiv.org/abs/1208.3109

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