Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene

V. V. Mkhitaryan; E. G. Mishchenko

doi:10.1103/physrevlett.110.086805

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arXiv · 1208.3708

Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene

V. V. Mkhitaryan·E. G. Mishchenko

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Abstract

Anderson impurity problem is considered for a graphene bilayer subject to a gap-opening bias. In-gap localized states are produced even when the impurity level overlaps with the continuum of band electrons. The effect depends strongly on the polarity of the applied bias as long as hybridization with the impurity occurs within a single layer. For an impurity level inside the conduction band a positive bias creates the new localized in-gap state. A negative bias does not produce the same result and leads to a simple broadening of the impurity level. The implications for transport are discussed including a possibility of gate-controlled Kondo effect.

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V. V. Mkhitaryan, E. G. Mishchenko. 2012-08-18. Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene. https://doi.org/10.1103/physrevlett.110.086805

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