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arXiv · 1209.0318

Infrared spectroscopy of hole doped ABA-stacked trilayer graphene

N. Ubrig·P. Blake·D. van der Marel·A. B. Kuzmenko
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Abstract

Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the {\pi}-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.

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N. Ubrig, P. Blake, D. van der Marel, A. B. Kuzmenko. 2012-09-03. Infrared spectroscopy of hole doped ABA-stacked trilayer graphene. https://doi.org/10.1209/0295-5075/100/58003

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