Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

L. V. Lutsev; V. V. Pavlov; P. A. Usachev; A. A. Astretsov; A. I. Stognij; N. N. Novitskii

doi:10.1063/1.4770377

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arXiv · 1209.3303

Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

L. V. Lutsev·V. V. Pavlov·P. A. Usachev·A. A. Astretsov·A. I. Stognij·N. N. Novitskii

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Abstract

In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.

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L. V. Lutsev, V. V. Pavlov, P. A. Usachev, A. A. Astretsov, A. I. Stognij, N. N. Novitskii. 2012-09-17. Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime. https://doi.org/10.1063/1.4770377

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