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arXiv · 1209.5707

A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Rong Shan·Siham Ouardi·Gerhard H. Fecher·Li Gao·Andrew Kellock·Andrei Gloskowskij·Carlos E. Vidal Barbosa·Eiji Ikenaga·Claudia Felser·Stuart S. P. Parkin
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Abstract

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k and a narrow indirect band gap of width 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard X-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.

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Rong Shan, Siham Ouardi, Gerhard H. Fecher, Li Gao, Andrew Kellock, Andrei Gloskowskij, Carlos E. Vidal Barbosa, Eiji Ikenaga, Claudia Felser, Stuart S. P. Parkin. 2012-09-25. A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100). https://doi.org/10.1063/1.4764520

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