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arXiv · 1210.0387

Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function

V. V. Vanovsky·V. S. Khrapai·A. A. Shashkin·V. Pellegrini·L. Sorba·G. Biasiol
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Abstract

Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave function extent controlled by back gate voltage is increased. Our calculations show that the contributions to the shift of B* from the change of the Coulomb energy and the g factor change due to nonparabolicity are approximately the same. The observed relative shift of B* is described with no fitting parameters.

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V. V. Vanovsky, V. S. Khrapai, A. A. Shashkin, V. Pellegrini, L. Sorba, G. Biasiol. 2013-02-14. Spin transition in the fractional quantum Hall regime: Effect of extent of the wave function. https://doi.org/10.1103/physrevb.87.081306

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