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arXiv · 1210.0993

Impurity impact ionization avalanche in p-type diamond

Vincent Mortet·A. Soltani
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Abstract

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.

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Vincent Mortet, A. Soltani. 2012-10-03. Impurity impact ionization avalanche in p-type diamond. https://doi.org/10.1063/1.3662403

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