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arXiv · 1210.1027

Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide

S. Yamada·K. Tanikawa·M. Miyao·K. Hamaya
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Abstract

We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-terminated one causes the three-dimensional epitaxial growth of Ge films. The high-quality Ge grown on the Si-terminated surface has almost no strain, meaning that the Ge films are not grown on the low-temperature-grown Si buffer layer but on the lattice matched metallic Fe3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts.

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S. Yamada, K. Tanikawa, M. Miyao, K. Hamaya. 2012-10-03. Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide. https://doi.org/10.1021/cg300791w

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