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arXiv · 1210.6601

Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells

Silke L. Diedenhofen·Grzegorz Grzela·Erik Haverkamp·Gerard Bauhuis·John Schermer·Jaime Gómez Rivas
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Abstract

We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF2/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9 % when the solar cell is coated with a graded refractive index layer with a thickness of 1μm. We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.

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Silke L. Diedenhofen, Grzegorz Grzela, Erik Haverkamp, Gerard Bauhuis, John Schermer, Jaime Gómez Rivas. 2012-10-24. Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells. https://doi.org/10.1016/j.solmat.2012.02.022

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