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arXiv · 1210.7558

Resistance Switching Induced by Electric Field and Light Illumination in Device of FTO/CeO2/Electrolyte/FTO

Xiaoqi Wang·Chuanbing Cai
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Abstract

A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is established with distinct transport performance, where FTO denotes F-doped transparent conducting glass, and the electrolyte is LiI and I2 in acetonitrile. The resistive switching behavior is observed, being induced through applying sufficient negative pulse as well as light illumination. The endurance measurements confirm that the write/erase periodic operation is reproducible and stable in the present device. Furthermore, the retention measurements demonstrate that the information can be stored temporarily for about 100 seconds. A possible mechanism regarding the formation of diiodide radical is proposed to give a reasonable explanation for the observed switching behavior.

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Xiaoqi Wang, Chuanbing Cai. 2012-11-21. Resistance Switching Induced by Electric Field and Light Illumination in Device of FTO/CeO2/Electrolyte/FTO. https://arxiv.org/abs/1210.7558

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