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arXiv · 1211.4076

Opposite Changes in Gap Width of Opposite Spin States Induced by Rashba Effect in Anti-ferromagnetic Graphene on Ni(111)

Chenhao Jin·Zhen Bi·Zonghai Hu·Ji Feng·Enge Wang
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Abstract

Graphene is a promising candidate for applications in spintronics. In this paper, Density Functional Theory method is used to calculate the band structure and magnetic properties of graphene on Ni(111). Our results show that once there is antiferromagnetic order in graphene, an external electric field at the order of 10^9 V/m can induce a gap width difference of tens of meV for opposite spin states near the Fermi surface.

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Chenhao Jin, Zhen Bi, Zonghai Hu, Ji Feng, Enge Wang. 2012-11-20. Opposite Changes in Gap Width of Opposite Spin States Induced by Rashba Effect in Anti-ferromagnetic Graphene on Ni(111). https://arxiv.org/abs/1211.4076

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