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arXiv · 1212.0329

Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

R. G. Mani·J. Hankinson·C. Berger·W. A. de Heer
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Abstract

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the detection, characterization, and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical-response and dual microwave-induced resonances in the dc-resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time, and the sub-lattice degeneracy-splitting at zero-magnetic-field.

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R. G. Mani, J. Hankinson, C. Berger, W. A. de Heer. 2012-12-03. Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene. https://doi.org/10.1038/ncomms1986

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