arXiv · 1212.5177
Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition
Abstract
The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Yeonbae Lee, Aviad Frydman, Tianran Chen, Brian Skinner, A. M. Goldman. 2013-05-28. Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition. https://doi.org/10.1103/physrevb.88.024509
Cite the original work for its findings. Save a collection to share your selection of sources.